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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2022 DESCRIPTION *With TO-220C package *High voltage APPLICATIONS *Series regulator, switch, and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 300 300 6 1 30 150 -50~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC2022 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=100mA 1.0 V ICBO Collector cut-off current VCB=300V ;IE=0 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC current gain IC=200m A ; VCE=4V 30 fT Transition frequency IC=100mA ; VCE=12V 10 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2022 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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